发明授权
US08261225B2 Semiconductor integrated circuit, standard cell, standard cell library, semiconductor integrated circuit designing method, and semiconductor integrated circuit designing equipment 有权
半导体集成电路,标准单元,标准单元库,半导体集成电路设计方法和半导体集成电路设计设备

  • 专利标题: Semiconductor integrated circuit, standard cell, standard cell library, semiconductor integrated circuit designing method, and semiconductor integrated circuit designing equipment
  • 专利标题(中): 半导体集成电路,标准单元,标准单元库,半导体集成电路设计方法和半导体集成电路设计设备
  • 申请号: US12714819
    申请日: 2010-03-01
  • 公开(公告)号: US08261225B2
    公开(公告)日: 2012-09-04
  • 发明人: Tetsurou ToubouNana OkamotoJunichi Yano
  • 申请人: Tetsurou ToubouNana OkamotoJunichi Yano
  • 申请人地址: JP Osaka
  • 专利权人: Panasonic Corporation
  • 当前专利权人: Panasonic Corporation
  • 当前专利权人地址: JP Osaka
  • 代理机构: McDermott Will & Emery LLP
  • 优先权: JP2005-191433 20050630
  • 主分类号: G06F17/50
  • IPC分类号: G06F17/50
Semiconductor integrated circuit, standard cell, standard cell library, semiconductor integrated circuit designing method, and semiconductor integrated circuit designing equipment
摘要:
A semiconductor integrated circuit includes a first transistor which is formed of a first gate extending in a first direction and a first diffusion region and which is capable of being active, a second transistor which is formed of a second gate extending in the first direction and a second diffusion region and which is arranged adjacent to the first transistor in a second direction intersected at a right angle with the first direction, and a third gate which extends in the first direction and which is arranged adjacent in the second direction to the first transistor on an opposite side to the second transistor. A space between the first gate and the second gate is larger than a space between the first gate and the third gate.
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