发明授权
- 专利标题: Self-releasing resist material for nano-imprint processes
- 专利标题(中): 用于纳米压印工艺的自发光抗蚀材料
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申请号: US12268823申请日: 2008-11-11
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公开(公告)号: US08262975B2公开(公告)日: 2012-09-11
- 发明人: Margaret E. Best , Xing-Cai Guo , Thomas E. Karis , Dan S. Kercher , Charles M. Mate , Tsai-Wei Wu
- 申请人: Margaret E. Best , Xing-Cai Guo , Thomas E. Karis , Dan S. Kercher , Charles M. Mate , Tsai-Wei Wu
- 申请人地址: NL Amsterdam
- 专利权人: HGST Netherlands B.V
- 当前专利权人: HGST Netherlands B.V
- 当前专利权人地址: NL Amsterdam
- 代理机构: Duft Bornsen & Fishman, LLP
- 主分类号: B27N3/08
- IPC分类号: B27N3/08
摘要:
Nanoimprint lithography using resist material with the addition of a surfactant is described. A template release layer is formed on a pattern of a template. A non-ionic surfactant is added to a resist material to form a mixed resist material. The resist material may comprise a hydrocarbon material having an unsaturated bond, such as an acrylate material. The surfactant may comprise polyalkylene glycol or an organically modified polysiloxane. A resist layer is then formed on a substrate from the mixed resist material. The surfactant added to the resist material forms a resist release layer on the surface of the resist layer. The template is then pressed into the resist layer, where the template release layer and the resist release layer are between the pattern of the template and the resist layer.
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