发明授权
- 专利标题： Method of forming variable resistance memory device
- 专利标题（中）： 形成可变电阻存储器件的方法
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申请号： US12953945申请日： 2010-11-24
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公开(公告)号： US08263455B2公开(公告)日： 2012-09-11
- 发明人: Young-Lim Park , Jinil Lee , Dongho Ahn , Sihyung Lee , Gyuhwan Oh
- 申请人： Young-Lim Park , Jinil Lee , Dongho Ahn , Sihyung Lee , Gyuhwan Oh
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2009-0114687 20091125
- 主分类号： H01L21/283
- IPC分类号： H01L21/283
摘要：
Provided are a method of forming an electrode of a variable resistance memory device and a variable resistance semiconductor memory device using the method. The method includes: forming a heat electrode; forming a variable resistance material layer on the heat electrode; and forming a top electrode on the variable resistance material layer, wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma.
公开/授权文献
- US20110124174A1 METHOD OF FORMING VARIABLE RESISTANCE MEMORY DEVICE 公开/授权日：2011-05-26