发明授权
- 专利标题: Structure for use in fabrication of PiN heterojunction TFET
- 专利标题(中): 用于制造PiN异质结TFET的结构
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申请号: US12684331申请日: 2010-01-08
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公开(公告)号: US08263477B2公开(公告)日: 2012-09-11
- 发明人: Sarunya Bangsaruntip , Steven Koester , Isaac Lauer , Jeffrey W. Sleight
- 申请人: Sarunya Bangsaruntip , Steven Koester , Isaac Lauer , Jeffrey W. Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L21/762 ; H01L29/78
摘要:
A method for fabricating a structure for use in fabrication of a PiN heterojunction tunnel field effect transistor (TFET) includes forming an alignment trench in a silicon wafer; forming a silicon germanium (SiGe) growth trench in the silicon wafer; growing a p-type SiGe region in the SiGe growth trench; forming a first oxide layer over the alignment trench and the p-type SiGe region; forming a hydrogen implantation region in the silicon wafer, the hydrogen implantation region dividing the silicon wafer into a upper silicon region and a lower silicon region; bonding the first oxide layer to a second oxide layer located on a handle wafer, forming a bonded oxide layer comprising the first oxide layer and the second oxide layer; and separating the lower silicon region from the upper silicon region at the hydrogen implantation region.