发明授权
- 专利标题： Formation method of metallic electrode of semiconductor device and metallic electrode formation apparatus
- 专利标题（中）： 半导体器件和金属电极形成装置的金属电极的形成方法
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申请号： US12923576申请日： 2010-09-28
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公开(公告)号： US08263490B2公开(公告)日： 2012-09-11
- 发明人: Manabu Tomisaka , Hidetoshi Katou , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki
- 申请人： Manabu Tomisaka , Hidetoshi Katou , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2009-225323 20090929; JP2010-195812 20100901
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.