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    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    2.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20110207264A1

    公开(公告)日：2011-08-25

    申请号：US12905395

    申请日：2010-10-15

    申请人： Manabu TOMISAKA ,  Akira Tai ,  Kazuo Akamatsu ,  Yutaka Fukuda ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

    发明人： Manabu TOMISAKA ,  Akira Tai ,  Kazuo Akamatsu ,  Yutaka Fukuda ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

    IPC分类号： H01L21/56

    CPC分类号： H01L21/304 ,  H01L29/66333 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device includes cutting a part of a resin insulating layer formed on a surface of a semiconductor substrate with a cutting tool. The cutting the part of the resin insulating layer includes cutting a portion of the resin insulating layer that has a surface on which a metal layer is disposed. The cutting the portion of the resin insulating layer is performed in such a manner that, in a stress distribution inside the resin insulating layer along an edge portion of the cutting tool and a peripheral portion of the edge portion, a width at 90% of a maximum value is not more than 1.3 μm.

    摘要翻译： 半导体器件的制造方法包括：利用切削工具切断形成在半导体基板的表面上的树脂绝缘层的一部分。 切割树脂绝缘层的一部分包括切割具有设置有金属层的表面的树脂绝缘层的一部分。 切割树脂绝缘层的部分是这样一种方式进行的：在树脂绝缘层沿着切削工具的边缘部分和边缘部分的周边部分的应力分布中，90％的宽度 最大值不大于1.3μm。

    Nonvolatile semiconductor memory device and method of erasing and programming the same
    8.
    发明申请
    Nonvolatile semiconductor memory device and method of erasing and programming the same 有权
    非易失性半导体存储器件及其擦除和编程方法

    公开(公告)号：US20080239817A1

    公开(公告)日：2008-10-02

    申请号：US12078446

    申请日：2008-03-31

    申请人： Mitsutaka Katada ,  Yukiaki Yogo ,  Akira Tai ,  Yukihiko Watanabe

    发明人： Mitsutaka Katada ,  Yukiaki Yogo ,  Akira Tai ,  Yukihiko Watanabe

    IPC分类号： G11C16/10

    CPC分类号： H01L29/4983 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/7885

    摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate having a source, a drain, and a channel region between the source and the drain. The channel region has a first end portion near the drain, a second end portion near the source, and a middle portion between the first and second end portions. The first and second end portions having approximately same width. The memory device is electrically erased by using a hot carrier generated in the first end portion due to avalanche breakdown. The channel region includes a first channel extending from the drain and a second channel adjacent to the first channel. An impurity concentration of the second channel is higher than that of the first channel. An interface between the first and second channels is located in the middle portion between the first and second end portions.

    摘要翻译： 非易失性半导体存储器件包括在源极和漏极之间具有源极，漏极和沟道区域的半导体衬底。 沟道区域具有靠近漏极的第一端部，靠近源极的第二端部，以及第一和第二端部之间的中间部分。 第一和第二端部具有大致相同的宽度。 通过使用由于雪崩击穿而在第一端部中产生的热载体来电存储器件。 沟道区域包括从漏极延伸的第一通道和邻近第一通道的第二通道。 第二通道的杂质浓度高于第一通道的杂质浓度。 第一和第二通道之间的界面位于第一和第二端部之间的中间部分。

    Semiconductor device having first and second insulation separation regions
    9.
    发明申请
    Semiconductor device having first and second insulation separation regions 有权
    具有第一和第二绝缘分离区域的半导体器件

    公开(公告)号：US20060278950A1

    公开(公告)日：2006-12-14

    申请号：US11447021

    申请日：2006-06-06

    申请人： Akira Tai

    发明人： Akira Tai

    IPC分类号： H01L29/00

    CPC分类号： H01L23/345 ,  H01L21/76264 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes: a semiconductor substrate having a first surface and a second surface; a first insulation separation region disposed on the first surface of the semiconductor substrate; a second insulation separation region surrounded with the first insulation separation region and electrically isolated from the first insulation separation region; a semiconductor element disposed in the second insulation separation region; and an electrode connecting to the first insulation separation region for energizing and generating heat in the first insulation separation region. The first insulation separation region functions as a heater so that the semiconductor element in the second insulation separation region is locally heated.

    摘要翻译： 半导体器件包括：具有第一表面和第二表面的半导体衬底; 设置在所述半导体基板的第一表面上的第一绝缘分离区域; 第二绝缘分离区，被所述第一绝缘分离区包围并与所述第一绝缘分离区电绝缘; 设置在所述第二绝缘分离区域中的半导体元件; 以及连接到第一绝缘分离区域的电极，用于在第一绝缘分离区域中激发和产生热量。 第一绝缘分离区域用作加热器，使得第二绝缘分离区域中的半导体元件被局部加热。