发明授权
- 专利标题： Thin film transistor and method of manufacturing the same
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US12453295申请日： 2009-05-06
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公开(公告)号： US08263978B2公开(公告)日： 2012-09-11
- 发明人: Byung-wook Yoo , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
- 申请人： Byung-wook Yoo , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-bae Park , Kyung-seok Son , Ji-sim Jung
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness Dickey & Pierce, P.L.C.
- 优先权： KR10-2008-0093862 20080924
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20
摘要：
A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.