- 专利标题： Compound semiconductor device including AIN layer of controlled skewness
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申请号： US12772661申请日： 2010-05-03
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公开(公告)号： US08264005B2公开(公告)日： 2012-09-11
- 发明人: Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- 申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2007-093574 20070330
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/20
摘要：
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
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