Invention Grant
- Patent Title: Compound semiconductor device including AIN layer of controlled skewness
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Application No.: US12772661Application Date: 2010-05-03
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Publication No.: US08264005B2Publication Date: 2012-09-11
- Inventor: Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- Applicant: Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-093574 20070330
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/20
Abstract:
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
Public/Granted literature
- US20100207124A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS Public/Granted day:2010-08-19
Information query
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