Invention Grant
- Patent Title: ESD/antenna diodes for through-silicon vias
- Patent Title (中): 用于穿硅通孔的ESD /天线二极管
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Application No.: US12605102Application Date: 2009-10-23
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Publication No.: US08264065B2Publication Date: 2012-09-11
- Inventor: Qing Su , Min Ni , Zongwu Tang , Jamil Kawa , James D. Sproch
- Applicant: Qing Su , Min Ni , Zongwu Tang , Jamil Kawa , James D. Sproch
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Warren S. Wolfeld
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/053 ; H01L23/12 ; H01L23/48 ; H01L23/52 ; H01L23/62
Abstract:
Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.
Public/Granted literature
- US20110095367A1 ESD/ANTENNA DIODES FOR THROUGH-SILICON VIAS Public/Granted day:2011-04-28
Information query
IPC分类:
