发明授权
- 专利标题： Liner formation in 3DIC structures
- 专利标题（中）： 3DIC结构中的衬垫形成
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申请号： US12617900申请日： 2009-11-13
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公开(公告)号： US08264066B2公开(公告)日： 2012-09-11
- 发明人: Ching-Yu Lo , Hung-Jung Tu , Hai-Ching Chen , Tien-I Bao , Wen-Chih Chiou , Chen-Hua Yu
- 申请人： Ching-Yu Lo , Hung-Jung Tu , Hai-Ching Chen , Tien-I Bao , Wen-Chih Chiou , Chen-Hua Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.
公开/授权文献
- US20110006428A1 Liner Formation in 3DIC Structures 公开/授权日：2011-01-13