Invention Grant
- Patent Title: Charged particle beam apparatus and sample processing method
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Application No.: US13135300Application Date: 2011-06-30
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Publication No.: US08269188B2Publication Date: 2012-09-18
- Inventor: Takashi Ogawa
- Applicant: Takashi Ogawa
- Applicant Address: JP
- Assignee: SII NanoTechnology Inc.
- Current Assignee: SII NanoTechnology Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2010-153110 20100705; JP2011-103712 20110506
- Main IPC: H01J3/14
- IPC: H01J3/14 ; H01J37/28 ; H01J37/30

Abstract:
A charged particle beam apparatus includes an ion beam column having an ion source for generating an ion beam, a first objective lens electrode which forms a first objective lens for focusing the ion beam on a sample, and a second objective lens electrode which is disposed at a position closer to the sample than the first objective lens electrode and forms a second objective lens for focusing an ion beam accelerated with a lower acceleration voltage on the sample.
Public/Granted literature
- US20120001086A1 Charged particle beam apparatus and sample processing method Public/Granted day:2012-01-05
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