发明授权
US08270207B2 Raising programming current of magnetic tunnel junctions by applying P-sub bias and adjusting threshold voltage
有权
通过施加P-sub偏置和调整阈值电压来提高磁隧道结的编程电流
- 专利标题： Raising programming current of magnetic tunnel junctions by applying P-sub bias and adjusting threshold voltage
- 专利标题（中）： 通过施加P-sub偏置和调整阈值电压来提高磁隧道结的编程电流
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申请号： US12687720申请日： 2010-01-14
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公开(公告)号： US08270207B2公开(公告)日： 2012-09-18
- 发明人: Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang
- 申请人： Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.
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