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    MRAM cells and circuit for programming the same
    3.
    发明授权
    MRAM cells and circuit for programming the same 有权
    MRAM单元和电路编程相同

    公开(公告)号：US08451655B2

    公开(公告)日：2013-05-28

    申请号：US13364955

    申请日：2012-02-02

    申请人： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

    发明人： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1677 ,  G11C11/1675

    摘要： A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.

    摘要翻译： 电路包括磁阻随机存取存储器（MRAM）单元和控制电路。 控制电路电耦合到MRAM单元，并且包括被配置为提供第一写入脉冲以将值写入MRAM单元的电流源和被配置为测量MRAM单元的状态的读取电路。 控制电路还被配置为验证通过第一写入脉冲是否实现了成功写入。

    Raising programming current of magnetic tunnel junctions by applying P-sub bias and adjusting threshold voltage
    4.
    发明授权
    Raising programming current of magnetic tunnel junctions by applying P-sub bias and adjusting threshold voltage 有权
    通过施加P-sub偏置和调整阈值电压来提高磁隧道结的编程电流

    公开(公告)号：US08270207B2

    公开(公告)日：2012-09-18

    申请号：US12687720

    申请日：2010-01-14

    申请人： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

    发明人： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.

    摘要翻译： 操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）器件的MRAM单元和具有串联耦合到MTJ器件的源极 - 漏极路径的字线选择器。 负极衬底偏置电压连接到字线选择器的主体以增加字线选择器的驱动电流。 字线选择器的阈值电压也减小。

    MRAM Cells and Circuit for Programming the Same
    6.
    发明申请
    MRAM Cells and Circuit for Programming the Same 有权
    MRAM单元及其编程电路

    公开(公告)号：US20120127788A1

    公开(公告)日：2012-05-24

    申请号：US13364955

    申请日：2012-02-02

    申请人： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

    发明人： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1677 ,  G11C11/1675

    摘要： A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.

    摘要翻译： 电路包括磁阻随机存取存储器（MRAM）单元和控制电路。 控制电路电耦合到MRAM单元，并且包括被配置为提供第一写入脉冲以将值写入MRAM单元的电流源和被配置为测量MRAM单元的状态的读取电路。 控制电路还被配置为验证通过第一写入脉冲是否实现了成功写入。