Invention Grant
US08270207B2 Raising programming current of magnetic tunnel junctions by applying P-sub bias and adjusting threshold voltage
有权
通过施加P-sub偏置和调整阈值电压来提高磁隧道结的编程电流
- Patent Title: Raising programming current of magnetic tunnel junctions by applying P-sub bias and adjusting threshold voltage
- Patent Title (中): 通过施加P-sub偏置和调整阈值电压来提高磁隧道结的编程电流
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Application No.: US12687720Application Date: 2010-01-14
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Publication No.: US08270207B2Publication Date: 2012-09-18
- Inventor: Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang
- Applicant: Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.
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