Invention Grant
- Patent Title: Method of constructing a semiconductor device and structure
- Patent Title (中): 构造半导体器件和结构的方法
-
Application No.: US13273712Application Date: 2011-10-14
-
Publication No.: US08273610B2Publication Date: 2012-09-25
- Inventor: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
- Applicant: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
- Applicant Address: US CA San Jose
- Assignee: MonolithIC 3D Inc.
- Current Assignee: MonolithIC 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Venable LLP
- Agent Michael A. Satori; Steven J. Schwarz
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L21/8238 ; H01L21/30
Abstract:
A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.
Public/Granted literature
- US20120129301A1 SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2012-05-24
Information query
IPC分类:
