Invention Grant
- Patent Title: Non-volatile memory device
- Patent Title (中): 非易失性存储器件
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Application No.: US13064204Application Date: 2011-03-10
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Publication No.: US08273646B2Publication Date: 2012-09-25
- Inventor: Toru Mori
- Applicant: Toru Mori
- Applicant Address: JP Yokohama
- Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-331239 20071224
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/788 ; H01L29/423
Abstract:
A non-volatile memory device includes a memory cell region which is formed on a semiconductor substrate to store predetermined information, and a peripheral circuit region which is formed on the semiconductor substrate. The memory cell region includes a gate electrode; and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of the gate electrode. The peripheral circuit region includes no charge storage layer therein.
Public/Granted literature
- US20110165770A1 Non-volatile memory device Public/Granted day:2011-07-07
Information query
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