发明授权
US08274840B2 Nonvolatile memory devices having built-in memory cell recovery during block erase and methods of operating same
有权
在块擦除期间具有内置存储器单元恢复的非易失性存储器件及其操作方法
- 专利标题: Nonvolatile memory devices having built-in memory cell recovery during block erase and methods of operating same
- 专利标题(中): 在块擦除期间具有内置存储器单元恢复的非易失性存储器件及其操作方法
-
申请号: US12498508申请日: 2009-07-07
-
公开(公告)号: US08274840B2公开(公告)日: 2012-09-25
- 发明人: Yong-June Kim , Jae-Hong Kim , Kyoung-Lae Cho , Seung-Hwan Song , Jun-Jin Kong
- 申请人: Yong-June Kim , Jae-Hong Kim , Kyoung-Lae Cho , Seung-Hwan Song , Jun-Jin Kong
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2008-0099620 20081010
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
Nonvolatile memory devices include support memory cell recovery during operations to erase blocks of nonvolatile (e.g., flash) memory cells. A nonvolatile memory system includes a flash memory device and a memory controller electrically coupled to the flash memory device. The memory controller is configured to control memory cell recovery operations within the flash memory device by issuing a first instruction(s) to the flash memory device that causes erased memory cells in the block of memory to become at least partially programmed memory cells and then issuing a second instruction(s) to the flash memory device that causes the at least partially programmed memory cells become fully erased.
公开/授权文献
信息查询