Invention Grant
US08274840B2 Nonvolatile memory devices having built-in memory cell recovery during block erase and methods of operating same
有权
在块擦除期间具有内置存储器单元恢复的非易失性存储器件及其操作方法
- Patent Title: Nonvolatile memory devices having built-in memory cell recovery during block erase and methods of operating same
- Patent Title (中): 在块擦除期间具有内置存储器单元恢复的非易失性存储器件及其操作方法
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Application No.: US12498508Application Date: 2009-07-07
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Publication No.: US08274840B2Publication Date: 2012-09-25
- Inventor: Yong-June Kim , Jae-Hong Kim , Kyoung-Lae Cho , Seung-Hwan Song , Jun-Jin Kong
- Applicant: Yong-June Kim , Jae-Hong Kim , Kyoung-Lae Cho , Seung-Hwan Song , Jun-Jin Kong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0099620 20081010
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
Nonvolatile memory devices include support memory cell recovery during operations to erase blocks of nonvolatile (e.g., flash) memory cells. A nonvolatile memory system includes a flash memory device and a memory controller electrically coupled to the flash memory device. The memory controller is configured to control memory cell recovery operations within the flash memory device by issuing a first instruction(s) to the flash memory device that causes erased memory cells in the block of memory to become at least partially programmed memory cells and then issuing a second instruction(s) to the flash memory device that causes the at least partially programmed memory cells become fully erased.
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