Invention Grant
- Patent Title: Semiconductor nanocrystal heterostructures
- Patent Title (中): 半导体纳米晶体异质结构
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Application No.: US12888161Application Date: 2010-09-22
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Publication No.: US08277942B2Publication Date: 2012-10-02
- Inventor: Sungjee Kim , Moungi G. Bawendi
- Applicant: Sungjee Kim , Moungi G. Bawendi
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Steptoe & Johnson LLP
- Main IPC: B32B5/16
- IPC: B32B5/16
Abstract:
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
Public/Granted literature
- US20110012061A1 Semiconductor nanocrystal heterostructures Public/Granted day:2011-01-20
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