发明授权
- 专利标题： Method for forming MTJ cells
- 专利标题（中）： 形成MTJ细胞的方法
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申请号： US12696771申请日： 2010-01-29
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公开(公告)号： US08278122B2公开(公告)日： 2012-10-02
- 发明人: Jiech-Fun Lu , Shih-Chang Liu , Chia-Shiung Tsai
- 申请人： Jiech-Fun Lu , Shih-Chang Liu , Chia-Shiung Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of forming an integrated circuit structure includes forming a bottom electrode layer over a substrate; forming magnetic tunnel junction (MTJ) layers over the bottom electrode layer; patterning the MTJ layers to form a MTJ stack; forming a dielectric layer covering the MTJ stack; forming an opening in the dielectric layer to expose a portion of the MTJ stack; filling the opening with a top electrode material; and performing a planarization to the top electrode material. After the step of performing the planarization, the top electrode material and the dielectric layer are patterned, wherein a first portion of the top electrode material in the opening forms a top electrode, and a second portion of the top electrode material forms a metal strip over the dielectric layer and connected to the top electrode.
公开/授权文献
- US20110189796A1 Uniformity in the Performance of MTJ Cells 公开/授权日：2011-08-04
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