发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13072211申请日: 2011-03-25
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公开(公告)号: US08278700B2公开(公告)日: 2012-10-02
- 发明人: Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
- 申请人: Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Mattingly & Malur, P.C.
- 优先权: JP2000-375686 20001211
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.
公开/授权文献
- US20110169070A1 SEMICONDUCTOR DEVICE 公开/授权日:2011-07-14
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