Invention Grant
US08278951B2 Probe station for testing semiconductor substrates and comprising EMI shielding
有权
用于测试半导体衬底并包含EMI屏蔽的探头站
- Patent Title: Probe station for testing semiconductor substrates and comprising EMI shielding
- Patent Title (中): 用于测试半导体衬底并包含EMI屏蔽的探头站
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Application No.: US11940355Application Date: 2007-11-15
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Publication No.: US08278951B2Publication Date: 2012-10-02
- Inventor: Stojan Kanev , Hans-Jurgen Fleischer , Stefan Kreissig , Karsten Stoll , Axel Schmidt , Andreas Kittlaus
- Applicant: Stojan Kanev , Hans-Jurgen Fleischer , Stefan Kreissig , Karsten Stoll , Axel Schmidt , Andreas Kittlaus
- Applicant Address: US OR Beaverton
- Assignee: Cascade Microtech, Inc.
- Current Assignee: Cascade Microtech, Inc.
- Current Assignee Address: US OR Beaverton
- Agency: DASCENZO Intellectual Property Law, P.C.
- Priority: DE102006054672 20061117
- Main IPC: G01R31/00
- IPC: G01R31/00

Abstract:
A probe station for testing semiconductor substrates, i.e., wafers and other electronic semiconductor elements, suitable for carrying out low-current and low-voltage measurement, comprises a shielding with which the electromagnetic influence (EMI) of the measurement of the semiconductor substrate can be minimized, and also comprises devices for the preparation of test signals. In addition, the housing of the probe station can offer a different possibility for the accessibility of individual components or component groups of the probe station.
Public/Granted literature
- US20080116918A1 PROBE STATION TO TESTING SEMICONDUCTOR SUBSTRATES AND COMPRISING EMI SHIELDING Public/Granted day:2008-05-22
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