发明授权
- 专利标题： System and method for calibrating a lithography model
- 专利标题（中）： 用于校准光刻模型的系统和方法
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申请号： US12536425申请日： 2009-08-05
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公开(公告)号： US08279409B1公开(公告)日： 2012-10-02
- 发明人: Abdurrahman Sezginer , Hsu-Ting Huang , Jesus Orsely Carrero , Tatung Chow , Kostyantyn Chuyeshov , Gokhan Percin
- 申请人： Abdurrahman Sezginer , Hsu-Ting Huang , Jesus Orsely Carrero , Tatung Chow , Kostyantyn Chuyeshov , Gokhan Percin
- 申请人地址： unknown San Jose
- 专利权人： Cadence Design Systems, Inc.
- 当前专利权人： Cadence Design Systems, Inc.
- 当前专利权人地址： unknown San Jose
- 代理机构： Kenyon & Kenyon LLP
- 主分类号： G03B27/32
- IPC分类号： G03B27/32 ; G03B27/54 ; G06F17/50
摘要：
The present invention provides a method for calibrating a computational model of a lithography process by calculating a demerit function using an intensity measurement at a location of a wafer; and calibrating the lithography model or a mask making model by determining values of parameters of the computational model using the calculated demerit function. The method may also use a second demerit function that is defined by the sum of squares of differences between a simulated and measured critical dimensions of a feature on the wafer.
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