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    Method of compensating photomask data for the effects of etch and lithography processes
    2.
    发明申请
    Method of compensating photomask data for the effects of etch and lithography processes 有权
    补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响

    公开(公告)号：US20070143733A1

    公开(公告)日：2007-06-21

    申请号：US11541921

    申请日：2006-10-02

    申请人： Franz Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    发明人： Franz Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

    摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

    Method of compensating photomask data for the effects of etch and lithography processes
    4.
    发明授权
    Method of compensating photomask data for the effects of etch and lithography processes 有权
    补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响

    公开(公告)号：US07600212B2

    公开(公告)日：2009-10-06

    申请号：US11541921

    申请日：2006-10-02

    申请人： Franz X. Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    发明人： Franz X. Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

    摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

    Method and system for reducing the impact of across-wafer variations on critical dimension measurements
    5.
    发明申请
    Method and system for reducing the impact of across-wafer variations on critical dimension measurements 有权

    公开(公告)号：US20060073686A1

    公开(公告)日：2006-04-06

    申请号：US10971350

    申请日：2004-10-22

    申请人： Franz Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    发明人： Franz Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    IPC分类号： H01L21/22

    CPC分类号： G03B27/72 ,  G03F7/70441 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

    摘要： First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    Method and system for reducing the impact of across-wafer variations on critical dimension measurements
    6.
    发明授权
    Method and system for reducing the impact of across-wafer variations on critical dimension measurements 有权
    减少跨晶圆变化对临界尺寸测量的影响的方法和系统

    公开(公告)号：US07588868B2

    公开(公告)日：2009-09-15

    申请号：US10971350

    申请日：2004-10-22

    申请人： Franz X. Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    发明人： Franz X. Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    IPC分类号： G03F9/00 ,  G03C5/00

    CPC分类号： G03B27/72 ,  G03F7/70441 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

    摘要： First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    摘要翻译： 进行掩模在晶片上的第一曝光和第二曝光，使得第二曝光的曝光场部分地与第一曝光的曝光场重叠。 确定一组特征的特征，并且确定光学邻近校正模型的参数的值。 对齐功能可用于对齐测量工具。 在另一个实施例中，成像系统的光瞳强度分布是通过用明亮特征曝光放射线检测器的图像场，将检测器定位在距离图像平面一定距离处，并且将检测器的图像场用 明亮的特征，导致来自两次曝光的检测器的图像场的累积曝光。 然后确定检测器的图像场的累积曝光中的空间图案的特性。

    Method for measuring and verifying stepper illumination
    8.
    发明申请
    Method for measuring and verifying stepper illumination 有权
    步进照明的测量和验证方法

    公开(公告)号：US20060268254A1

    公开(公告)日：2006-11-30

    申请号：US11141803

    申请日：2005-05-31

    申请人： Gokhan Percin ,  Abdurrahman Sezginer ,  Franz Zach

    发明人： Gokhan Percin ,  Abdurrahman Sezginer ,  Franz Zach

    IPC分类号： G03B27/72

    CPC分类号： G03F7/7025 ,  G03F7/70591

    摘要： An apparatus and method for characterizing an illumination pupil of an exposure tool comprises forming a plurality of pinhole test patterns at a plurality of test site locations to facilitate locating test pattern edges for extracting therefrom the illumination pupil characteristics of the exposure tool.

    摘要翻译： 用于表征曝光工具的照明光瞳的装置和方法包括在多个测试位置处形成多个针孔测试图案，以便于定位测试图案边缘以从其中提取曝光工具的照明光瞳特性。

    INTEGRATION OF STRUCTURALLY-STABLE ISOLATED CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (CMUT) ARRAY CELLS AND ARRAY ELEMENTS
    9.
    发明申请
    INTEGRATION OF STRUCTURALLY-STABLE ISOLATED CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (CMUT) ARRAY CELLS AND ARRAY ELEMENTS 有权
    结构稳定隔离电容式微超声波超声波传感器（CMUT）阵列单元和阵列元件的集成

    公开(公告)号：US20120187508A1

    公开(公告)日：2012-07-26

    申请号：US13419216

    申请日：2012-03-13

    申请人： Steven J. Adler ,  Peter Johnson ,  Gokhan Percin ,  Shahram Mostafazadeh

    发明人： Steven J. Adler ,  Peter Johnson ,  Gokhan Percin ,  Shahram Mostafazadeh

    IPC分类号： H01L29/84 ,  H01L21/50

    CPC分类号： H01L27/1203 ,  B06B1/0292 ,  G01N29/2406 ,  H01L21/76898

    摘要： A method for forming a capacitive micromachined ultrasonic transducer (CMUT) includes forming multiple CMUT elements in a first semiconductor-on-insulator (SOI) structure. Each CMUT element includes multiple CMUT cells. The first SOI structure includes a first handle wafer, a first buried layer, and a first active layer. The method also includes forming a membrane over the CMUT elements and forming electrical contacts through the first handle wafer and the first buried layer. The electrical contacts are in electrical connection with the CMUT elements. The membrane could be formed by bonding a second SOI structure to the first SOI structure, where the second SOI structure includes a second handle wafer, a second buried layer, and a second active layer. The second handle wafer and the second buried layer can be removed, and the membrane includes the second active layer.

    摘要翻译： 一种用于形成电容微加工超声换能器（CMUT）的方法包括在第一绝缘体上绝缘体（SOI）结构中形成多个CMUT元件。 每个CMUT元素包括多个CMUT单元。 第一SOI结构包括第一处理晶片，第一掩埋层和第一有源层。 该方法还包括在CMUT元件上形成膜并通过第一处理晶片和第一掩埋层形成电触点。 电触点与CMUT元件电连接。 可以通过将第二SOI结构结合到第一SOI结构来形成膜，其中第二SOI结构包括第二处理晶片，第二掩埋层和第二有源层。 可以去除第二处理晶片和第二掩埋层，并且膜包括第二有源层。

    Method and system for forming a capacitive micromachined ultrasonic transducer
    10.
    发明授权
    Method and system for forming a capacitive micromachined ultrasonic transducer 有权
    用于形成电容微加工超声换能器的方法和系统

    公开(公告)号：US08222065B1

    公开(公告)日：2012-07-17

    申请号：US12587139

    申请日：2009-10-02

    申请人： Peter Smeys ,  Peter Johnson ,  Gokhan Percin

    发明人： Peter Smeys ,  Peter Johnson ,  Gokhan Percin

    IPC分类号： H01L29/72

    CPC分类号： B06B1/0292 ,  H01L27/0688

    摘要： A method for forming a capacitive micromachined ultrasonic transducer (CMUT) is provided that includes forming oxide features outwardly of a CMUT control chip in a silicon wafer. The oxide features are planarized. A silicon-on-insulator (SOI) wafer is bonded to the planarized oxide features. For a particular embodiment, the SOI wafer comprises a single crystal epitaxial layer, a buried oxide layer and a silicon layer, and the single crystal epitaxial layer is bonded to the planarized oxide features, after which the silicon layer and the buried oxide layer of the SOI wafer are removed, leaving the single crystal epitaxial layer bonded to the oxide layer.

    摘要翻译： 提供一种用于形成电容微加工超声换能器（CMUT）的方法，其包括在硅晶片中的CMUT控制芯片外部形成氧化物特征。 氧化物的特征被平坦化。 绝缘体上硅（SOI）晶片与平坦化的氧化物特征结合。 对于特定实施例，SOI晶片包括单晶外延层，掩埋氧化物层和硅层，并且单晶外延层结合到平坦化的氧化物特征，之后硅层和掩埋氧化物层 去除SOI晶片，留下单晶外延层与氧化物层结合。