发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12987090申请日: 2011-01-08
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公开(公告)号: US08283210B2公开(公告)日: 2012-10-09
- 发明人: Nobuyasu Muto
- 申请人: Nobuyasu Muto
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2010-002957 20100108
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.
公开/授权文献
- US20110171777A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2011-07-14
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