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公开(公告)号：US08796074B2
公开(公告)日：2014-08-05
申请号：US13611222
申请日：2012-09-12
申请人： Nobuyasu Muto
发明人： Nobuyasu Muto
IPC分类号： H01L21/683 , H01L21/78 , H01L25/04
CPC分类号： H01L25/0652 , H01L21/6836 , H01L21/78 , H01L23/04 , H01L23/3142 , H01L23/49811 , H01L23/49838 , H01L24/03 , H01L24/27 , H01L24/29 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68322 , H01L2221/68327 , H01L2224/04042 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/43 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/48257 , H01L2224/48471 , H01L2224/48479 , H01L2224/4911 , H01L2224/49111 , H01L2224/49175 , H01L2224/49429 , H01L2224/73265 , H01L2224/75743 , H01L2224/78 , H01L2224/78301 , H01L2224/83191 , H01L2224/838 , H01L2224/85001 , H01L2224/85051 , H01L2224/85148 , H01L2224/85205 , H01L2224/85986 , H01L2224/92247 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/181 , H01L2924/1815 , H01L2924/30105 , H01L2224/85186 , H01L2924/00 , H01L2224/48227 , H01L2924/3512 , H01L2924/00012 , H01L2224/32225 , H01L2224/4554
摘要： Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.
摘要翻译： 进行使用叶片的切割步骤进行以获得半导体晶片的厚度减小的半导体芯片时发生的切屑破裂。 当在半导体晶片的切割步骤中切割半导体晶片时，刀片如下进行：沿着第一直线在第一方向（图12中的Y方向）的切割中，刀片从第一直线 指向第二点。 第一点位于第一部分中，第二点与第一点相对，第二点与穿过其间的半导体晶片的中心点的第二直线相对。
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公开(公告)号：US20110269268A1
公开(公告)日：2011-11-03
申请号：US13179468
申请日：2011-07-08
申请人： NOBUYASU MUTO , Naoki Kawanabe , Hiroshi Ono , Tamaki Wada
发明人： NOBUYASU MUTO , Naoki Kawanabe , Hiroshi Ono , Tamaki Wada
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , H01L23/5388 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/743 , H01L24/78 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05554 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/48455 , H01L2224/48465 , H01L2224/48471 , H01L2224/48472 , H01L2224/48479 , H01L2224/48599 , H01L2224/4911 , H01L2224/49113 , H01L2224/4917 , H01L2224/49171 , H01L2224/49174 , H01L2224/49175 , H01L2224/49429 , H01L2224/4945 , H01L2224/73265 , H01L2224/743 , H01L2224/78301 , H01L2224/83192 , H01L2224/83194 , H01L2224/838 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85191 , H01L2224/85951 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/06506 , H01L2225/0651 , H01L2225/06555 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要： The degree of freedom of the chip layout in a semiconductor device is improved, and improvement in packaging density is aimed at.Since it becomes possible to form the wire of two directions on the pad of a memory chip by performing the over-bonding of reverse bonding by ball bonding, an effect equivalent to continuation stitch bonding of wedge bonding can be produced by ball bonding. Hereby, the degree of freedom of a chip layout and the degree of freedom of the lead layout of substrate 3 can be improved, and the packaging density on a substrate in a chip lamination type semiconductor device (memory card) can be improved.
摘要翻译： 提高了半导体器件中的芯片布局的自由度，并且旨在提高封装密度。 由于可以通过通过球接合进行反向接合的过粘结而在存储芯片的焊盘上形成两个方向的线，因此可以通过球接合产生与楔形接合的连续接合接合相当的效果。 因此，可以提高芯片布局的自由度和基板3的引线布局的自由度，并且可以提高芯片层叠型半导体器件（存储卡）中的基板上的封装密度。
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公开(公告)号：US20110171777A1
公开(公告)日：2011-07-14
申请号：US12987090
申请日：2011-01-08
申请人： Nobuyasu MUTO
发明人： Nobuyasu MUTO
IPC分类号： H01L21/50
CPC分类号： H01L25/0652 , H01L21/6836 , H01L21/78 , H01L23/04 , H01L23/3142 , H01L23/49811 , H01L23/49838 , H01L24/03 , H01L24/27 , H01L24/29 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68322 , H01L2221/68327 , H01L2224/04042 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/43 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/48257 , H01L2224/48471 , H01L2224/48479 , H01L2224/4911 , H01L2224/49111 , H01L2224/49175 , H01L2224/49429 , H01L2224/73265 , H01L2224/75743 , H01L2224/78 , H01L2224/78301 , H01L2224/83191 , H01L2224/838 , H01L2224/85001 , H01L2224/85051 , H01L2224/85148 , H01L2224/85205 , H01L2224/85986 , H01L2224/92247 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/181 , H01L2924/1815 , H01L2924/30105 , H01L2224/85186 , H01L2924/00 , H01L2224/48227 , H01L2924/3512 , H01L2924/00012 , H01L2224/32225 , H01L2224/4554
摘要： Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.
摘要翻译： 进行使用叶片的切割步骤进行以获得半导体晶片的厚度减小的半导体芯片时发生的切屑破裂。 当在半导体晶片的切割步骤中切割半导体晶片时，刀片如下进行：沿着第一直线在第一方向（图12中的Y方向）的切割中，刀片从第一直线 指向第二点。 第一点位于第一部分中，第二点与第一点相对，第二点与穿过其间的半导体晶片的中心点的第二直线相对。
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公开(公告)号：US08530278B2
公开(公告)日：2013-09-10
申请号：US13179468
申请日：2011-07-08
申请人： Nobuyasu Muto , Naoki Kawanabe , Hiroshi Ono , Tamaki Wada
发明人： Nobuyasu Muto , Naoki Kawanabe , Hiroshi Ono , Tamaki Wada
IPC分类号： H01L25/065 , H01L25/10 , H01L21/60
CPC分类号： H01L24/85 , H01L23/5388 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/743 , H01L24/78 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05554 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/48455 , H01L2224/48465 , H01L2224/48471 , H01L2224/48472 , H01L2224/48479 , H01L2224/48599 , H01L2224/4911 , H01L2224/49113 , H01L2224/4917 , H01L2224/49171 , H01L2224/49174 , H01L2224/49175 , H01L2224/49429 , H01L2224/4945 , H01L2224/73265 , H01L2224/743 , H01L2224/78301 , H01L2224/83192 , H01L2224/83194 , H01L2224/838 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85191 , H01L2224/85951 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/06506 , H01L2225/0651 , H01L2225/06555 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要： The degree of freedom of the chip layout in a semiconductor device is improved, and improvement in packaging density is aimed at.Since it becomes possible to form the wire of two directions on the pad of a memory chip by performing the over-bonding of reverse bonding by ball bonding, an effect equivalent to continuation stitch bonding of wedge bonding can be produced by ball bonding. Hereby, the degree of freedom of a chip layout and the degree of freedom of the lead layout of substrate 3 can be improved, and the packaging density on a substrate in a chip lamination type semiconductor device (memory card) can be improved.
摘要翻译： 提高了半导体器件中的芯片布局的自由度，并且旨在提高封装密度。 由于可以通过通过球接合进行反向接合的过粘结而在存储芯片的焊盘上形成两个方向的线，因此可以通过球接合产生与楔形接合的连续接合接合相当的效果。 因此，可以提高芯片布局的自由度和基板3的引线布局的自由度，并且可以提高芯片层叠型半导体器件（存储卡）中的基板上的封装密度。
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公开(公告)号：US08283210B2
公开(公告)日：2012-10-09
申请号：US12987090
申请日：2011-01-08
申请人： Nobuyasu Muto
发明人： Nobuyasu Muto
IPC分类号： H01L21/00
CPC分类号： H01L25/0652 , H01L21/6836 , H01L21/78 , H01L23/04 , H01L23/3142 , H01L23/49811 , H01L23/49838 , H01L24/03 , H01L24/27 , H01L24/29 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68322 , H01L2221/68327 , H01L2224/04042 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/43 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/48257 , H01L2224/48471 , H01L2224/48479 , H01L2224/4911 , H01L2224/49111 , H01L2224/49175 , H01L2224/49429 , H01L2224/73265 , H01L2224/75743 , H01L2224/78 , H01L2224/78301 , H01L2224/83191 , H01L2224/838 , H01L2224/85001 , H01L2224/85051 , H01L2224/85148 , H01L2224/85205 , H01L2224/85986 , H01L2224/92247 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/181 , H01L2924/1815 , H01L2924/30105 , H01L2224/85186 , H01L2924/00 , H01L2224/48227 , H01L2924/3512 , H01L2924/00012 , H01L2224/32225 , H01L2224/4554
摘要： Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.
摘要翻译： 进行使用叶片的切割步骤进行以获得半导体晶片的厚度减小的半导体芯片时发生的切屑破裂。 当在半导体晶片的切割步骤中切割半导体晶片时，刀片如下进行：沿着第一直线在第一方向（图12中的Y方向）的切割中，刀片从第一直线 指向第二点。 第一点位于第一部分中，第二点与第一点相对，第二点与穿过其间的半导体晶片的中心点的第二直线相对。
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公开(公告)号：US20130005086A1
公开(公告)日：2013-01-03
申请号：US13611222
申请日：2012-09-12
申请人： NOBUYASU MUTO
发明人： NOBUYASU MUTO
IPC分类号： H01L21/50
CPC分类号： H01L25/0652 , H01L21/6836 , H01L21/78 , H01L23/04 , H01L23/3142 , H01L23/49811 , H01L23/49838 , H01L24/03 , H01L24/27 , H01L24/29 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68322 , H01L2221/68327 , H01L2224/04042 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/43 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/48257 , H01L2224/48471 , H01L2224/48479 , H01L2224/4911 , H01L2224/49111 , H01L2224/49175 , H01L2224/49429 , H01L2224/73265 , H01L2224/75743 , H01L2224/78 , H01L2224/78301 , H01L2224/83191 , H01L2224/838 , H01L2224/85001 , H01L2224/85051 , H01L2224/85148 , H01L2224/85205 , H01L2224/85986 , H01L2224/92247 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/181 , H01L2924/1815 , H01L2924/30105 , H01L2224/85186 , H01L2924/00 , H01L2224/48227 , H01L2924/3512 , H01L2924/00012 , H01L2224/32225 , H01L2224/4554
摘要： Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.
摘要翻译： 进行使用叶片的切割步骤进行以获得半导体晶片的厚度减小的半导体芯片时发生的切屑破裂。 当在半导体晶片的切割步骤中切割半导体晶片时，刀片如下进行：沿着第一直线在第一方向（图12中的Y方向）的切割中，刀片从第一直线 指向第二点。 第一点位于第一部分中，第二点与第一点相对，第二点与穿过其间的半导体晶片的中心点的第二直线相对。
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公开(公告)号：US07981788B2
公开(公告)日：2011-07-19
申请号：US11482854
申请日：2006-07-10
申请人： Nobuyasu Muto , Naoki Kawanabe , Hiroshi Ono , Tamaki Wada
发明人： Nobuyasu Muto , Naoki Kawanabe , Hiroshi Ono , Tamaki Wada
IPC分类号： H01L21/44
CPC分类号： H01L24/85 , H01L23/5388 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/743 , H01L24/78 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05554 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/48455 , H01L2224/48465 , H01L2224/48471 , H01L2224/48472 , H01L2224/48479 , H01L2224/48599 , H01L2224/4911 , H01L2224/49113 , H01L2224/4917 , H01L2224/49171 , H01L2224/49174 , H01L2224/49175 , H01L2224/49429 , H01L2224/4945 , H01L2224/73265 , H01L2224/743 , H01L2224/78301 , H01L2224/83192 , H01L2224/83194 , H01L2224/838 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85191 , H01L2224/85951 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/06506 , H01L2225/0651 , H01L2225/06555 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要： The degree of freedom of the chip layout in a semiconductor device is improved, and improvement in packaging density is aimed at.Since it becomes possible to form the wire of two directions on the pad of a memory chip by performing the over-bonding of reverse bonding by ball bonding, an effect equivalent to continuation stitch bonding of wedge bonding can be produced by ball bonding. Hereby, the degree of freedom of a chip layout and the degree of freedom of the lead layout of substrate 3 can be improved, and the packaging density on a substrate in a chip lamination type semiconductor device (memory card) can be improved.
摘要翻译： 提高了半导体器件中的芯片布局的自由度，并且旨在提高封装密度。 由于可以通过通过球接合进行反向接合的过粘结而在存储芯片的焊盘上形成两个方向的线，因此可以通过球接合产生与楔形接合的连续接合接合相当的效果。 因此，可以提高芯片布局的自由度和基板3的引线布局的自由度，并且可以提高芯片层叠型半导体器件（存储卡）中的基板上的封装密度。
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