Invention Grant
US08283245B2 Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
有权
使用电感耦合等离子体化学气相沉积制造太阳能电池的方法
- Patent Title: Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
- Patent Title (中): 使用电感耦合等离子体化学气相沉积制造太阳能电池的方法
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Application No.: US13312020Application Date: 2011-12-06
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Publication No.: US08283245B2Publication Date: 2012-10-09
- Inventor: Chaehwan Jeong , Jong Ho Lee , Ho-Sung Kim , Seongjae Boo
- Applicant: Chaehwan Jeong , Jong Ho Lee , Ho-Sung Kim , Seongjae Boo
- Applicant Address: unknown Cheonan-Si, Chungcheongnam-Do
- Assignee: Korea Institute of Industrial Technology
- Current Assignee: Korea Institute of Industrial Technology
- Current Assignee Address: unknown Cheonan-Si, Chungcheongnam-Do
- Agency: Workman Nydegger
- Priority: KR10-2009-0013059 20090217; KR10-2009-0013195 20090218; KR10-2009-0013204 20090218; KR10-2009-0101304 20091023
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. At least one of the second-type layer, the intrinsic layer and the first-type layer is formed as a crystallized Si layer by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas, the mixed gas having a silane gas (SiH4) in a ratio of 0.016 to 0.02.
Public/Granted literature
- US20120077306A1 Method for Fabricating Solar Cell Using Inductively Coupled Plasma Chemical Vapor Deposition Public/Granted day:2012-03-29
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