发明授权
US08283941B2 Alternating current (AC) stress test circuit, method for evaluating AC stress induced hot carrier injection (HCI) degradation, and test structure for HCI degradation evaluation
有权
交流电压（AC）应力测试电路，评估AC应力诱发热载流子注入（HCI）降解的方法，以及HCI降解评估试验结构
- 专利标题： Alternating current (AC) stress test circuit, method for evaluating AC stress induced hot carrier injection (HCI) degradation, and test structure for HCI degradation evaluation
- 专利标题（中）： 交流电压（AC）应力测试电路，评估AC应力诱发热载流子注入（HCI）降解的方法，以及HCI降解评估试验结构
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申请号： US12703949申请日： 2010-02-11
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公开(公告)号： US08283941B2公开(公告)日： 2012-10-09
- 发明人: Sung-Nien Kuo , Yuan-Yu Hsieh , Wen-Hsiung Ko , Jih-San Lee , Kuei-Chi Juan , Kuan-Cheng Su
- 申请人： Sung-Nien Kuo , Yuan-Yu Hsieh , Wen-Hsiung Ko , Jih-San Lee , Kuei-Chi Juan , Kuan-Cheng Su
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理商 Chun-Ming Shih
- 主分类号： G01R31/02
- IPC分类号： G01R31/02 ; G01R31/26
摘要：
An AC stress test circuit for HCI degradation evaluation in semiconductor devices includes a ring oscillator circuit, first and second pads, and first and second isolating switches. The ring oscillator circuit has a plurality of stages connected in series to form a loop. Each of the stages comprises a first node and a second node. The first and second isolating switches respectively connect the first and second pads to the first and second nodes of a designated stage and both are switched-off during ring oscillator stressing of the designated stage. The present invention also provides a method of evaluating AC stress induced HCI degradation, and a test structure.
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