发明授权
- 专利标题: Substrate support for high throughput chemical treatment system
- 专利标题(中): 基材支持高通量化学处理系统
-
申请号: US12183694申请日: 2008-07-31
-
公开(公告)号: US08287688B2公开(公告)日: 2012-10-16
- 发明人: Jay R. Wallace , Hiroyuki Takahashi
- 申请人: Jay R. Wallace , Hiroyuki Takahashi
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 主分类号: C23F1/08
- IPC分类号: C23F1/08
摘要:
A high throughput chemical treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. A substrate support in the chemical treatment system is configured to support a plurality of substrates.