发明授权
US08288237B2 TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
有权
TiC作为高k SiO 2栅极堆叠上的热稳定的p金属碳化物
- 专利标题： TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
- 专利标题（中）： TiC作为高k SiO 2栅极堆叠上的热稳定的p金属碳化物
-
申请号： US12541575申请日： 2009-08-14
-
公开(公告)号： US08288237B2公开(公告)日： 2012-10-16
- 发明人: Alessandro C. Callegari , Michael A. Gribelyuk , Dianne L. Lacey , Fenton R. Feeney , Katherine L. Saenger , Sufi Zafar
- 申请人： Alessandro C. Callegari , Michael A. Gribelyuk , Dianne L. Lacey , Fenton R. Feeney , Katherine L. Saenger , Sufi Zafar
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.