公开(公告)号：US08288237B2

公开(公告)日：2012-10-16

申请号：US12541575

申请日：2009-08-14

申请人： Alessandro C. Callegari ,  Michael A. Gribelyuk ,  Dianne L. Lacey ,  Fenton R. Feeney ,  Katherine L. Saenger ,  Sufi Zafar

发明人： Alessandro C. Callegari ,  Michael A. Gribelyuk ,  Dianne L. Lacey ,  Fenton R. Feeney ,  Katherine L. Saenger ,  Sufi Zafar

IPC分类号： H01L21/336

CPC分类号： H01L29/4966 ,  C23C14/0036 ,  C23C14/0635 ,  H01L21/28088 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

摘要： A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.

摘要翻译： 提供了包含TiC的复合金属，其是在包括高k电介质和界面层的栅极堆叠上具有约4.75至约5.3，优选约5e的功函数的功函数的热电稳定的p型金属，以及 制造TiC复合金属的方法。 此外，本发明的TiC金属化合物在1000℃下是非常有效的氧扩散阻挡层，允许在p金属氧化物半导体（pMOS）器件中非常有侵蚀性的等效氧化物厚度（EOT）和反型层厚度缩小至低于Å 。