发明授权
- 专利标题: Method for producing a semiconductor
- 专利标题(中): 半导体制造方法
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申请号: US12769976申请日: 2010-04-29
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公开(公告)号: US08288258B2公开(公告)日: 2012-10-16
- 发明人: Anton Mauder , Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Wolfgang Werner
- 申请人: Anton Mauder , Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Wolfgang Werner
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 代理机构: Dicke, Billig & Czaja, PLLC
- 主分类号: H01L21/306
- IPC分类号: H01L21/306
摘要:
A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
公开/授权文献
- US20100210091A1 METHOD FOR PRODUCING A SEMICONDUCTOR 公开/授权日:2010-08-19