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公开(公告)号：US20090298270A1
公开(公告)日：2009-12-03
申请号：US12474464
申请日：2009-05-29
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/263 , H01L21/26506 , H01L21/3242
摘要： A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 公开了半导体的制造方法。 一个实施例提供了具有第一侧和第二侧的p掺杂半导体本体。 通过将半导体本体中的质子经由第一侧向下注入到半导体本体的特定深度并且随后至少加热半导体本体的质子注入区域，在半导体本体中形成n掺杂区。 在半导体体中产生pn结。 半导体主体的第二面至少与在pn结处跨过的空间电荷区域一样被去除。
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公开(公告)号：US08288258B2
公开(公告)日：2012-10-16
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/306
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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公开(公告)号：US20100210091A1
公开(公告)日：2010-08-19
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/762 , H01L21/461 , H01L21/22 , H01L21/38 , H01L21/302
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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公开(公告)号：US08378384B2
公开(公告)日：2013-02-19
申请号：US11864584
申请日：2007-09-28
IPC分类号： H01L29/66 , H01L31/102
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3221 , Y10T428/2495 , Y10T428/26
摘要： A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
摘要翻译： 晶片包括晶片前侧表面和与晶片前侧表面相邻的区域。 该区域包括氧沉淀物，并且晶片正面包括预定的表面结构以在其上形成具有所需性质的器件。
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公开(公告)号：US07982289B2
公开(公告)日：2011-07-19
申请号：US12967866
申请日：2010-12-14
IPC分类号： H01L29/167 , H01L21/265
CPC分类号： H01L21/3225 , H01L21/263 , H01L21/324 , H03H9/175 , Y10T428/2495 , Y10T428/26
摘要： A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
摘要翻译： 晶片包括晶片前端和与器件表面相邻的区域，其中该区域包括空位 - 氧络合物，并且晶片前端包括预定的表面结构以在其上形成具有所需性质的器件。
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公开(公告)号：US07879699B2
公开(公告)日：2011-02-01
申请号：US11864483
申请日：2007-09-28
IPC分类号： H01L21/20 , H01L31/111
CPC分类号： H01L21/3225 , H01L21/263 , H01L21/324 , H03H9/175 , Y10T428/2495 , Y10T428/26
摘要： A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
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公开(公告)号：US08647968B2
公开(公告)日：2014-02-11
申请号：US12482101
申请日：2009-06-10
IPC分类号： H01L21/20
CPC分类号： H01L29/04 , C30B25/18 , C30B29/06 , C30B33/02 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02658 , H01L21/263 , H01L21/3225 , H01L29/0657
摘要： A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.
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公开(公告)号：US20110079882A1
公开(公告)日：2011-04-07
申请号：US12967866
申请日：2010-12-14
IPC分类号： H01L29/30
CPC分类号： H01L21/3225 , H01L21/263 , H01L21/324 , H03H9/175 , Y10T428/2495 , Y10T428/26
摘要： A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
摘要翻译： 晶片包括晶片前端和与器件表面相邻的区域，其中该区域包括空位 - 氧络合物，并且晶片前端包括预定的表面结构以在其上形成具有所需性质的器件。
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公开(公告)号：US20090087631A1
公开(公告)日：2009-04-02
申请号：US11864483
申请日：2007-09-28
CPC分类号： H01L21/3225 , H01L21/263 , H01L21/324 , H03H9/175 , Y10T428/2495 , Y10T428/26
摘要： A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
摘要翻译： 晶片包括晶片前端和与器件表面相邻的区域，其中该区域包括空位 - 氧络合物，并且晶片前端包括预定的表面结构以在其上形成具有所需性质的器件。
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公开(公告)号：US20090305486A1
公开(公告)日：2009-12-10
申请号：US12482101
申请日：2009-06-10
IPC分类号： H01L21/20
CPC分类号： H01L29/04 , C30B25/18 , C30B29/06 , C30B33/02 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02658 , H01L21/263 , H01L21/3225 , H01L29/0657
摘要： A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.
摘要翻译： 公开了半导体层的制造方法。 一个实施例提供了含有氧的半导体衬底上的半导体层。 晶体缺陷至少在半导体衬底的近表面区域产生。 进行热处理，其中氧被吸收在晶体缺陷处。 外延在半导体衬底的近表面区域上沉积半导体层。
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