Invention Grant
- Patent Title: Enhanced electromigration resistance in TSV structure and design
- Patent Title (中): TSV结构和设计中增强的电迁移阻力
-
Application No.: US13397004Application Date: 2012-02-15
-
Publication No.: US08288270B2Publication Date: 2012-10-16
- Inventor: Mukta G Farooq , John A Griesemer , Gary LaFontant , William Francis Landers , Timothy Dooling Sullivan
- Applicant: Mukta G Farooq , John A Griesemer , Gary LaFontant , William Francis Landers , Timothy Dooling Sullivan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jason H. Sosa; Katherine S. Brown
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
The embodiments provide a method for reducing electromigration in a circuit containing a through-silicon via (TSV) and the resulting novel structure for the TSV. A TSV is formed through a semiconductor substrate. A first end of the TSV connects to a first metallization layer on a device side of the semiconductor substrate. A second end of the TSV connects to a second metallization layer on a grind side of the semiconductor substrate. A first flat edge is created on the first end of the TSV at the intersection of the first end of the TSV and the first metallization layer. A second flat edge is created on the second end of the TSV at the intersection of the second end of the TSV and the second metallization layer. On top of the first end a metal contact grid is placed, having less than eighty percent metal coverage.
Public/Granted literature
- US20120199983A1 ENHANCED ELECTROMIGRATION RESISTANCE IN TSV STRUCTURE AND DESIGN Public/Granted day:2012-08-09
Information query
IPC分类:
