发明授权
- 专利标题: Enhanced electromigration resistance in TSV structure and design
- 专利标题(中): TSV结构和设计中增强的电迁移阻力
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申请号: US13397004申请日: 2012-02-15
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公开(公告)号: US08288270B2公开(公告)日: 2012-10-16
- 发明人: Mukta G Farooq , John A Griesemer , Gary LaFontant , William Francis Landers , Timothy Dooling Sullivan
- 申请人: Mukta G Farooq , John A Griesemer , Gary LaFontant , William Francis Landers , Timothy Dooling Sullivan
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Jason H. Sosa; Katherine S. Brown
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
The embodiments provide a method for reducing electromigration in a circuit containing a through-silicon via (TSV) and the resulting novel structure for the TSV. A TSV is formed through a semiconductor substrate. A first end of the TSV connects to a first metallization layer on a device side of the semiconductor substrate. A second end of the TSV connects to a second metallization layer on a grind side of the semiconductor substrate. A first flat edge is created on the first end of the TSV at the intersection of the first end of the TSV and the first metallization layer. A second flat edge is created on the second end of the TSV at the intersection of the second end of the TSV and the second metallization layer. On top of the first end a metal contact grid is placed, having less than eighty percent metal coverage.