Invention Grant
- Patent Title: Gate control circuit for high bandwidth switch design
- Patent Title (中): 门控电路用于高带宽开关设计
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Application No.: US12650377Application Date: 2009-12-30
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Publication No.: US08289066B2Publication Date: 2012-10-16
- Inventor: Dianbo Guo
- Applicant: Dianbo Guo
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Asia Pacific Pte Ltd.
- Current Assignee: STMicroelectronics Asia Pacific Pte Ltd.
- Current Assignee Address: SG Singapore
- Agency: Seed IP Law Group PLLC
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
An analog switch configuration includes a gate control circuit coupled between an input of a switch and a gate of the switch. The gate control circuit passes voltage changes on the input of the switch to the gate of the switch to decrease the influence the inherent gate to input capacitance has on the bandwidth of the switch. By reducing the change in voltage across the inherent capacitance, the current through the capacitance in decreased as well as its influence on the bandwidth of the configuration.
Public/Granted literature
- US20110156794A1 GATE CONTROL CIRCUIT FOR HIGH BANDWIDTH SWITCH DESIGN Public/Granted day:2011-06-30
Information query
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