发明授权
- 专利标题: Method of manufacturing photoelectric conversion device
- 专利标题(中): 制造光电转换装置的方法
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申请号: US13172768申请日: 2011-06-29
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公开(公告)号: US08293560B2公开(公告)日: 2012-10-23
- 发明人: Katsunori Hirota
- 申请人: Katsunori Hirota
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2009-137719 20090608
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L31/0232
摘要:
A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive layer on the first insulating film and patterning the electrically conductive layer, etching an exposed surface of the first insulating film, forming a charge accumulation region of a photoelectric converter by implanting impurity ions of a first conductivity type into the semiconductor substrate through a thinned portion of the first insulating film formed by the etching, removing the thinned portion, forming a second insulating film covering the semiconductor substrate and the gate electrode, and forming a surface region of the photoelectric converter by implanting impurity ions of a second conductivity type opposite to the first conductivity type into the semiconductor substrate through the second insulating film.
公开/授权文献
- US20110256660A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 公开/授权日:2011-10-20