Invention Grant
US08293591B2 Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device
有权
包含金层的场效应晶体管,包括场效应晶体管的微流体装置以及使用场效应晶体管和微流体装置检测具有硫醇基的分析物的方法
- Patent Title: Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device
- Patent Title (中): 包含金层的场效应晶体管,包括场效应晶体管的微流体装置以及使用场效应晶体管和微流体装置检测具有硫醇基的分析物的方法
-
Application No.: US11733539Application Date: 2007-04-10
-
Publication No.: US08293591B2Publication Date: 2012-10-23
- Inventor: Jeo-young Shim , Kyu-tae Yoo , Kyu-sang Lee , Won-seok Chung , Yeon-ja Cho , Chang-eun Yoo
- Applicant: Jeo-young Shim , Kyu-tae Yoo , Kyu-sang Lee , Won-seok Chung , Yeon-ja Cho , Chang-eun Yoo
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0032413 20060410
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.
Public/Granted literature
Information query
IPC分类: