发明授权
- 专利标题: Through silicon via with embedded decoupling capacitor
- 专利标题(中): 通过硅通孔与嵌入式去耦电容
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申请号: US12479885申请日: 2009-06-08
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公开(公告)号: US08294240B2公开(公告)日: 2012-10-23
- 发明人: Matthew Michael Nowak , Shiqun Gu
- 申请人: Matthew Michael Nowak , Shiqun Gu
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- 主分类号: H01L29/92
- IPC分类号: H01L29/92
摘要:
A semiconductor die, having a substrate, includes a through silicon via. The through silicon via includes a decoupling capacitor having a first co-axial conductor, a second co-axial conductor, and a co-axial dielectric separating the first co-axial conductor from the second co-axial conductor. The decoupling capacitor is configured to provide local charge storage for components on the semiconductor die.
公开/授权文献
- US20100308435A1 Through Silicon Via With Embedded Decoupling Capacitor 公开/授权日:2010-12-09