Invention Grant
- Patent Title: Matrix-type cold-cathode electron source device
- Patent Title (中): 矩阵型冷阴极电子源装置
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Application No.: US12920011Application Date: 2009-02-19
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Publication No.: US08294351B2Publication Date: 2012-10-23
- Inventor: Makoto Yamamoto , Keisuke Koga
- Applicant: Makoto Yamamoto , Keisuke Koga
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2008-052755 20080304
- International Application: PCT/JP2009/000686 WO 20090219
- International Announcement: WO2009/110179 WO 20090911
- Main IPC: H01J1/30
- IPC: H01J1/30 ; H01J1/62

Abstract:
A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.
Public/Granted literature
- US20110001421A1 MATRIX-TYPE COLD-CATHODE ELECTRON SOURCE DEVICE Public/Granted day:2011-01-06
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