发明授权
US08298917B2 Process for wet singulation using a dicing singulation structure 有权
使用切割分离结构进行湿分离的方法

Process for wet singulation using a dicing singulation structure
摘要:
A method includes receiving at least one wafer having a front side and a backside, where the front side has a plurality of integrated circuit chips thereon. The backside of the wafer is thinned, a pattern of material is removed from the backside of the wafer to form a plurality of dicing trenches. Each of the dicing trenches are positioned opposite a location on the front side of the wafer that corresponds to edges of each of the plurality of chips. The dicing trenches are filled with a filler material and a dicing support is attached to a front side of the wafer. The filler material is removed from the dicing trenches, and a force is applied to the dicing support to separate each of the plurality of chips on the wafer from each other along the dicing trenches.
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