发明授权
US08299452B2 Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
有权
用于制造半极性（Al，In，Ga，B）N型发光二极管的方法
- 专利标题： Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
- 专利标题（中）： 用于制造半极性（Al，In，Ga，B）N型发光二极管的方法
-
申请号： US13405590申请日： 2012-02-27
-
公开(公告)号： US08299452B2公开(公告)日： 2012-10-30
- 发明人: Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.