发明授权
US08299620B2 Semiconductor device with welded leads and method of manufacturing the same
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具有焊接引线的半导体器件及其制造方法
- 专利标题： Semiconductor device with welded leads and method of manufacturing the same
- 专利标题（中）： 具有焊接引线的半导体器件及其制造方法
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申请号： US12163055申请日： 2008-06-27
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公开(公告)号： US08299620B2公开(公告)日： 2012-10-30
- 发明人: Takekazu Tanaka , Kouhei Takahashi
- 申请人： Takekazu Tanaka , Kouhei Takahashi
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Foley & Lardner LLP
- 优先权： JP2007-176829 20070705
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A semiconductor device and a manufacturing method for preventing mechanical and thermal damage to the semiconductor chip. A laser beam welds a first connection pad formed on a first external lead to a first electrode formed on the surface of the semiconductor chip. A first connection hole is formed in the first connection pad, and the first connection hole overlaps the first connection electrode. A laser beam irradiates an area including the first connection hole, and the first connection pad in a portion around the first connection hole is melted to form a melting section, that is welded to the first connection electrode to easily form a semiconductor device with more excellent electrical characteristics.
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