Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12880730Application Date: 2010-09-13
-
Publication No.: US08299845B2Publication Date: 2012-10-30
- Inventor: Toru Ishikawa
- Applicant: Toru Ishikawa
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Morrison & Foerster LLP
- Priority: JP2009-214508 20090916
- Main IPC: H01H37/76
- IPC: H01H37/76

Abstract:
A semiconductor device includes a first circuit, a second circuit, and a first voltage dividing circuit. The first circuit is coupled to a first terminal. The first circuit is operable by a first voltage supplied from the first terminal. The second circuit is coupled through a first resistive element to the first terminal. The second circuit is operable by a second voltage supplied through the first resistive element from the first terminal. The second voltage is smaller in absolute value than the first voltage. The first voltage dividing circuit is coupled to a first node between the first resistive element and the second circuit. The first voltage dividing circuit has a conductive state and a non-conductive state. The first voltage dividing circuit is kept in the conductive state while applying the first voltage to the first terminal to allow the first circuit to operate by the first voltage.
Public/Granted literature
- US20110063017A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-03-17
Information query