Invention Grant
US08304336B2 Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
有权
使用电感耦合等离子体化学气相沉积制造太阳能电池的方法
- Patent Title: Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
- Patent Title (中): 使用电感耦合等离子体化学气相沉积制造太阳能电池的方法
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Application No.: US12605162Application Date: 2009-10-23
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Publication No.: US08304336B2Publication Date: 2012-11-06
- Inventor: Chaehwan Jeong , Jong Ho Lee , Ho-Sung Kim , Seongjae Boo
- Applicant: Chaehwan Jeong , Jong Ho Lee , Ho-Sung Kim , Seongjae Boo
- Applicant Address: KR
- Assignee: Korea Institute of Industrial Technology
- Current Assignee: Korea Institute of Industrial Technology
- Current Assignee Address: KR
- Agency: Workman Nydegger
- Priority: KR10-2009-0013059 20090217; KR10-2009-0013195 20090218; KR10-2009-0013204 20090218; KR10-2009-0101304 20091023
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.
Public/Granted literature
- US20100210061A1 METHOD FOR FABRICATING SOLAR CELL USING INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION Public/Granted day:2010-08-19
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