发明授权
US08305836B2 Semiconductor memory device highly integrated in direction of columns 失效
半导体存储器件高度集成在列方向上

Semiconductor memory device highly integrated in direction of columns
摘要:
First and second read word lines are provided in each set made of two adjacent rows. First, second, third, and fourth read bit lines are provided in each column. Each of the first and second read word lines is connected to memory cells in a corresponding one of the sets. Each of the first and third read bit lines is connected to a memory cell in one row in each of the sets, out of memory cells in a corresponding one of the columns. Each of the second and fourth read bit lines is connected to a memory cell in the other row in each of the sets, out of the memory cells in the corresponding one of the columns.
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