发明授权
- 专利标题: Semiconductor memory device highly integrated in direction of columns
- 专利标题(中): 半导体存储器件高度集成在列方向上
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申请号: US13111422申请日: 2011-05-19
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公开(公告)号: US08305836B2公开(公告)日: 2012-11-06
- 发明人: Koji Nii
- 申请人: Koji Nii
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2008-084442 20080327
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
First and second read word lines are provided in each set made of two adjacent rows. First, second, third, and fourth read bit lines are provided in each column. Each of the first and second read word lines is connected to memory cells in a corresponding one of the sets. Each of the first and third read bit lines is connected to a memory cell in one row in each of the sets, out of memory cells in a corresponding one of the columns. Each of the second and fourth read bit lines is connected to a memory cell in the other row in each of the sets, out of the memory cells in the corresponding one of the columns.
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