Invention Grant
- Patent Title: Multi-level integrated photonic devices
- Patent Title (中): 多层次集成光子器件
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Application No.: US12641053Application Date: 2009-12-17
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Publication No.: US08306087B2Publication Date: 2012-11-06
- Inventor: Alex A. Behfar , Malcolm R. Green , Alfred T. Schremer
- Applicant: Alex A. Behfar , Malcolm R. Green , Alfred T. Schremer
- Applicant Address: US NY Ithaca
- Assignee: Binoptics Corporation
- Current Assignee: Binoptics Corporation
- Current Assignee Address: US NY Ithaca
- Agent William A. Blake
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
Public/Granted literature
- US20100091810A1 MULTI-LEVEL INTEGRATED PHOTONIC DEVICES Public/Granted day:2010-04-15
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