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    Integrated photonic devices
    4.
    发明授权
    Integrated photonic devices 有权
    集成光子器件

    公开(公告)号：US07569860B2

    公开(公告)日：2009-08-04

    申请号：US11037334

    申请日：2005-01-19

    Applicant: Alex A. Behfar ,  Malcolm Green ,  Alfred T. Schremer

    Inventor： Alex A. Behfar ,  Malcolm Green ,  Alfred T. Schremer

    IPC: H01L29/161

    CPC classification number: H01S5/0264 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/0262 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  H01S5/4087

    Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

    Abstract translation: 集成在单个芯片（20）的相应外延层上的激光器（22）和检测器（24）与片上和/或外部光学器件（62）配合，以将由激光器发射的第一波长的光耦合到单个外部 装置，例如光纤（60），并且将从外部装置接收的不同波长的光同时耦合到检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。

    Low cost InGaAIN based lasers
    5.
    发明授权
    Low cost InGaAIN based lasers 有权
    低成本基于InGaAIN的激光器

    公开(公告)号：US07408183B2

    公开(公告)日：2008-08-05

    申请号：US11509015

    申请日：2006-08-24

    Applicant: Alex A. Behfar ,  Wilfried Lenth

    Inventor： Alex A. Behfar ,  Wilfried Lenth

    IPC: H01L33/00

    CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

    Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

    Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干法蚀刻产生长度为1cm和宽度b m的激光台面。 使用光刻和蚀刻的另一序列来形成在台面顶部具有宽度w的脊结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 可以选择芯片的长度长度和宽度b 作为等于或长于波导长度l1c和台面的方便值 宽度b 。 选择波导长度和宽度，使得对于给定的缺陷密度D，产率Y D大于50％。

    Etched-facet ridge lasers with etch-stop
    6.
    发明申请
    Etched-facet ridge lasers with etch-stop 有权
    具有蚀刻停止的蚀刻面脊激光器

    公开(公告)号：US20080151955A1

    公开(公告)日：2008-06-26

    申请号：US11644828

    申请日：2006-12-26

    Applicant: Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    Inventor： Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    IPC: H01S5/22 ,  H01L21/302

    CPC classification number: H01S5/22 ,  H01S5/209 ,  H01S5/2214

    Abstract: A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.

    Abstract translation: 光子器件包含具有有源区的外延结构，并且其包括在有源区上方但接近于有源区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。

    AIGaInN-based lasers with dovetailed ridge
    7.
    发明申请
    AIGaInN-based lasers with dovetailed ridge 有权
    基于AIGAInN的激光与燕尾山脊

    公开(公告)号：US20080019408A1

    公开(公告)日：2008-01-24

    申请号：US11826809

    申请日：2007-07-18

    Applicant: Alex A. Behfar

    Inventor： Alex A. Behfar

    IPC: H01S5/02 ,  H01L21/311

    CPC classification number: H01S5/0201 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0203 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/22 ,  H01S5/34333

    Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.

    Abstract translation: 一种用于制造能够发射蓝光的激光的工艺，其中在CAIBE中，使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜，并且其中所述激光波导具有向内 倾斜的侧壁。

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