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公开(公告)号:US08160114B2
公开(公告)日:2012-04-17
申请号:US12908592
申请日:2010-10-20
IPC分类号: H01S3/03
CPC分类号: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
摘要: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
摘要翻译: 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔,具有多个法布里 - 珀罗元件的前镜叠层,后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面,并且激光腔是蚀刻的脊腔,全部由外延晶片通过两步光刻和CAIBE工艺形成。
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公开(公告)号:US07835415B2
公开(公告)日:2010-11-16
申请号:US10929718
申请日:2004-08-31
IPC分类号: H01S3/03
CPC分类号: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
摘要: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
摘要翻译: 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔,具有多个法布里 - 珀罗元件的前镜叠层,后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面,并且激光腔是蚀刻的脊腔,全部由外延晶片通过两步光刻和CAIBE工艺形成。
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公开(公告)号:US07675957B2
公开(公告)日:2010-03-09
申请号:US12043131
申请日:2008-03-05
CPC分类号: H01S5/18 , H01S5/02212 , H01S5/02248 , H01S5/0228 , H01S5/02288 , H01S5/02292 , H01S5/0683
摘要: A surface emitting laser (100) and a monitoring photodetector (MPD) 158 are mounted in a TO (transistor outline package) can (150) on the same plane as one another. Light from a rear facet (108) of the laser is directed to the MPD through a polymer light guide (164).
摘要翻译: 表面发射激光器(100)和监视光电检测器(MPD)158安装在彼此相同的平面上的TO(晶体管外形封装)罐(150)中。 来自激光器的后面(108)的光通过聚合物光导(164)被引导到MPD。
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公开(公告)号:US07569860B2
公开(公告)日:2009-08-04
申请号:US11037334
申请日:2005-01-19
IPC分类号: H01L29/161
CPC分类号: H01S5/0264 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02292 , H01S5/0262 , H01S5/0683 , H01S5/1085 , H01S5/18 , H01S5/2022 , H01S5/4012 , H01S5/4056 , H01S5/4087
摘要: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.
摘要翻译: 集成在单个芯片(20)的相应外延层上的激光器(22)和检测器(24)与片上和/或外部光学器件(62)配合,以将由激光器发射的第一波长的光耦合到单个外部 装置,例如光纤(60),并且将从外部装置接收的不同波长的光同时耦合到检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。
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公开(公告)号:US07408183B2
公开(公告)日:2008-08-05
申请号:US11509015
申请日:2006-08-24
申请人: Alex A. Behfar , Wilfried Lenth
发明人: Alex A. Behfar , Wilfried Lenth
IPC分类号: H01L33/00
CPC分类号: H01S5/0207 , G11B7/127 , G11B7/22 , H01S5/0042 , H01S5/0201 , H01S5/026 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/4056 , H01S2301/18
摘要: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.
摘要翻译: 用于产生具有良好的光学波前特征的激光器的方法和结构,例如光学存储所需要的,包括提供一种激光器,其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡,以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层,有源层,上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干法蚀刻产生长度为1cm和宽度b m的激光台面。 使用光刻和蚀刻的另一序列来形成在台面顶部具有宽度w的脊结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 可以选择芯片的长度长度和宽度b SUB>作为等于或长于波导长度l1c和台面的方便值 宽度b sub>。 选择波导长度和宽度,使得对于给定的缺陷密度D,产率Y D大于50%。
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公开(公告)号:US20080151955A1
公开(公告)日:2008-06-26
申请号:US11644828
申请日:2006-12-26
IPC分类号: H01S5/22 , H01L21/302
CPC分类号: H01S5/22 , H01S5/209 , H01S5/2214
摘要: A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
摘要翻译: 光子器件包含具有有源区的外延结构,并且其包括在有源区上方但接近于有源区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻,在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成,并在湿蚀刻停止层处停止。
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公开(公告)号:US20080019408A1
公开(公告)日:2008-01-24
申请号:US11826809
申请日:2007-07-18
申请人: Alex A. Behfar
发明人: Alex A. Behfar
IPC分类号: H01S5/02 , H01L21/311
CPC分类号: H01S5/0201 , B82Y20/00 , H01S5/0014 , H01S5/0203 , H01S5/1085 , H01S5/18 , H01S5/22 , H01S5/34333
摘要: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.
摘要翻译: 一种用于制造能够发射蓝光的激光的工艺,其中在CAIBE中,使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜,并且其中所述激光波导具有向内 倾斜的侧壁。
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公开(公告)号:US07245645B2
公开(公告)日:2007-07-17
申请号:US10963739
申请日:2004-10-14
IPC分类号: H01S5/00
CPC分类号: H01S5/0264 , H01S5/02284 , H01S5/026 , H01S5/0262 , H01S5/0267 , H01S5/0654 , H01S5/0683 , H01S5/1014 , H01S5/1085 , H01S5/125 , H01S5/141 , H01S5/18 , H01S5/22 , H01S5/2231 , H01S5/4012 , H01S5/42
摘要: A surface-emitting laser, in which light is emitted vertically at one end from a near 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser comprises a divergence-compensating lens on the surface above the near 45°-angled facet.
摘要翻译: 一个表面发射激光器,其中一端从近45°角的小平面垂直发射光,包括具有垂直小面的第二端,光从该垂直面垂直射出,用于监视。 表面发射激光器包括位于近45°凸面的上表面上的发散补偿透镜。
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公开(公告)号:US08306087B2
公开(公告)日:2012-11-06
申请号:US12641053
申请日:2009-12-17
IPC分类号: H01S5/00
CPC分类号: B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
摘要: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
摘要翻译: 激光和电吸收调制器(EAM)通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构的第二层。 激光与EAM之间的强光耦合通过使用两个45度的转向镜将光从激光波导垂直传播到EAM波导来实现。 使用定向角蚀刻工艺来形成两个成角度的小平面。
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公开(公告)号:US20120149141A1
公开(公告)日:2012-06-14
申请号:US13397612
申请日:2012-02-15
IPC分类号: H01L33/02
CPC分类号: H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
摘要: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.
摘要翻译: 用于制造能够发射蓝光的基于AlGaInN的光子器件(例如激光器)的工艺采用干蚀刻来形成器件波导和反射镜。 干蚀刻优选使用化学辅助离子束蚀刻(CAIBE)系统进行。
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