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1.发明授权High SMSR unidirectional etched lasers and low back-reflection photonic device 有权高SMSR单向蚀刻激光器和低背反射光子器件公开(公告)号：US08891576B2
公开(公告)日：2014-11-18
申请号：US12895979
申请日：2010-10-01
CPC分类号： H01S5/0287 , G02B6/12004 , H01S5/005 , H01S5/0085 , H01S5/0656 , H01S5/06817 , H01S5/0687 , H01S5/1021 , H01S5/1071 , H01S5/1082 , H01S5/1085 , H01S5/125 , H01S5/14
摘要： Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
摘要翻译： 通过在激光腔中形成一个或多个蚀刻间隙（78,80）来增强激光器的单向性。 可以在激光器的任何部分（例如环形激光器的任何腿部）中或在V形激光器（60）的一个腿部（62）中提供间隙。 耦合到激光器的光子器件的远端处的布鲁斯特角小面减少反射到激光腔。 在激光器的输出处使用分布式布拉格反射器来增强激光器的侧模抑制比。
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公开(公告)号：US08249122B2
公开(公告)日：2012-08-21
申请号：US13154097
申请日：2011-06-06
申请人： Alex A. Behfar , Alfred T. Schremer
发明人： Alex A. Behfar , Alfred T. Schremer
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0203 , H01S5/0286 , H01S5/0287 , H01S5/1082 , H01S5/1085 , H01S5/18 , H01S5/22 , H01S2301/166
摘要： An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.
摘要翻译： 蚀刻小面单横向半导体光子器件通过在蚀刻刻面上沉积抗反射涂层并以空间受控的方式沉积反射率修饰涂层来制造，以改变发射光束的空间性能。
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公开(公告)号：US07972879B2
公开(公告)日：2011-07-05
申请号：US12641023
申请日：2009-12-17
CPC分类号： B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
摘要： A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
摘要翻译： 激光和电吸收调制器（EAM）通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构的第二层。 激光与EAM之间的强光耦合通过使用两个45度的转向镜将光从激光波导垂直传播到EAM波导来实现。 使用定向角蚀刻工艺来形成两个成角度的小平面。
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公开(公告)号：US07656922B2
公开(公告)日：2010-02-02
申请号：US11105552
申请日：2005-04-14
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
摘要： A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
摘要翻译： 激光和电吸收调制器（EAM）通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构的第二层。 激光与EAM之间的强光耦合通过使用两个45度的转向镜将光从激光波导垂直传播到EAM波导来实现。 使用定向角蚀刻工艺来形成两个成角度的小平面。
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公开(公告)号：US08306086B2
公开(公告)日：2012-11-06
申请号：US13397595
申请日：2012-02-15
IPC分类号： H01S5/00
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
摘要： A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
摘要翻译： 用于制造能够发射蓝光的基于AlGaInN的光子器件（例如激光器）的工艺采用蚀刻法，在CAIBE中优选使用超过500℃的温度和超过500V的离子束来形成器件波导和反射镜。
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公开(公告)号：US20110317734A1
公开(公告)日：2011-12-29
申请号：US13154097
申请日：2011-06-06
申请人： Alex A. Behfar , Alfred T. Schremer
发明人： Alex A. Behfar , Alfred T. Schremer
IPC分类号： H01S5/22
CPC分类号： H01S5/028 , H01S5/0203 , H01S5/0286 , H01S5/0287 , H01S5/1082 , H01S5/1085 , H01S5/18 , H01S5/22 , H01S2301/166
摘要： An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.
摘要翻译： 蚀刻小面单横向半导体光子器件通过在蚀刻刻面上沉积抗反射涂层并以空间受控的方式沉积反射率修饰涂层来制造，以改变发射光束的空间性能。
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公开(公告)号：US08009711B2
公开(公告)日：2011-08-30
申请号：US12567448
申请日：2009-09-25
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/209 , H01S5/2214
摘要： A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
摘要翻译： 光子器件包含具有有源区的外延结构，并且其包括在活性区上方但接近于活性区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。
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公开(公告)号：US20110032967A1
公开(公告)日：2011-02-10
申请号：US12908592
申请日：2010-10-20
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
摘要： A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
摘要翻译： 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。
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公开(公告)号：US20100099209A1
公开(公告)日：2010-04-22
申请号：US12641023
申请日：2009-12-17
IPC分类号： H01L21/302
CPC分类号： B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
摘要： A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
摘要翻译： 激光和电吸收调制器（EAM）通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构的第二层。 激光与EAM之间的强光耦合通过使用两个45度的转向镜将光从激光波导垂直传播到EAM波导来实现。 使用定向角蚀刻工艺来形成两个成角度的小平面。
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公开(公告)号：US20100015743A1
公开(公告)日：2010-01-21
申请号：US12567448
申请日：2009-09-25
IPC分类号： H01L21/30
CPC分类号： H01S5/22 , H01S5/209 , H01S5/2214
摘要： A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
摘要翻译： 光子器件包含具有有源区的外延结构，并且其包括在活性区上方但接近于活性区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。
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