发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12838451申请日： 2010-07-17
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公开(公告)号： US08314032B2公开(公告)日： 2012-11-20
- 发明人: Tetsufumi Kawamura , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
- 申请人： Tetsufumi Kawamura , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2009-191589 20090821
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.
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