发明授权
US08318534B2 Non-volatile resistive-switching memories formed using anodization
有权
使用阳极氧化形成的非易失性电阻式开关存储器
- 专利标题： Non-volatile resistive-switching memories formed using anodization
- 专利标题（中）： 使用阳极氧化形成的非易失性电阻式开关存储器
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申请号： US13098632申请日： 2011-05-02
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公开(公告)号： US08318534B2公开(公告)日： 2012-11-27
- 发明人: Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
- 申请人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
- 申请人地址： US CA San Jose
- 专利权人： Intermolecular, Inc.
- 当前专利权人： Intermolecular, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.
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